IGB50N60TATMA1
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Description:
IGBT 600V 100A 1.5V TO263-3
Supplier:
INFINEON
Matchcode:
IGB50N60T
Rutronik No.:
IGBT1060
Unit Pack:
1000
MOQ:
1000
package:
TO263
Packaging:
REEL
Datasheet
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Samples
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- Supplier Part
- SP000054922
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Malaysia
- ABC-Code
- A
- Supplier Lead time
- 21 weeks
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Summary of Features
- Lowest V ce(sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
- Very soft, fast recovery anti-parallel Emitter Controlled Diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
Benefits
- Highest efficiency – low conduction and switching losses
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
Target Applications
- UPS
- Solar Inverters
- Major Home Appliances
- Welding
- Air conditioning
- Industrial Drives
- Other hard switching applications
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