- V(CE)
- 600 V
- I(C)
- 50 A
- V(CEsat)
- 1.5 V
- Package
- TO247-3
- Bodydiode
- YES
- P(tot)
- 333 W
- Automotive
- NO
- t(r)
- 29 nS
- td(off)
- 299 nS
- td(on)
- 26 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- TrenchStop
- Packaging
- TUBE
- Supplier Part
- SP000054888
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- ABC-Code
- A
- Supplier Lead time
- 21 weeks
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Summary of Features
- Lowest V CEsat drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in V CEsat
- Very soft, fast recovery anti-parallel Emitter Controlled Diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
Benefits
- Highest efficiency – low conduction and switching losses
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability