- V(CE)
- 1200 V
- I(C)
- 300 A
- td(on)
- 720 ns
- td(off)
- 1250 ns
- P(tot)
- 175 W
- t(r)
- NO ns
- V(CEsat)
- SMD V
- Bodydiode
- TrenchIGBT
- Automotive
- NO
- Package
- DUAL INT-A
- RoHS Status
- RoHS-conform
- Packaging
- TUBE
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- Supplier Lead time
- 18 weeks
DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology
FEATURES
1200 V IGBT trench and field stop technology with positive temperature coefficient
Low switching losses
Maximum junction temperature 175 °C
APPLICATIONS
Short circuit ruggedness
