- Polarity
- NPN
- U(cc) max
- 4.5 V
- Frequency f
- 1800 MHz
- P(out)
- 0.45 W
- Package
- SOT343
- Automotive
- AEC-Q(100)
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP000745270
- ECCN
- EAR99
- Customs Tariff No.
- 85412100000
- Country
- China
- ABC-Code
- B
- Supplier Lead time
- 10 weeks
High Linearity Low Noise Si NPN RF Transistor
Summary of Features:
- Highly linear low noise driver amplifier for all RF frontends up to 2.5 GHz
- Output compression point OP1dB = 18.5 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system
- Output 3rd order intermodulation point OIP3 = 31 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system
- Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
- Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz
- Based on Infineon´s reliable, high volume 25 GHz SIEGET™ line
- Easy to use Pb-free (RoHS compliant) standard package with visible leads
- Qualification report according to AEC-Q101 available
- Driver amplifier
- ISM bands 434 and 868 MHz
- 1.9 GHz cordless phones
- CATV LNA
- Transmitter driver amplifier
- 2.4 GHz WLAN and Bluetooth
- Output stage LNA for active antennas
- TV, GPS, SDARS, 2.4 GHz WLAN, etc.
- Suitable for 3 - 5.5 GHz oscillators