- V(CE)
- 1200 V
- I(C)
- 281 A
- V(CEsat)
- 1.57 V
- Package
- SOT-227
- Bodydiode
- NO
- P(tot)
- 862 W
- Automotive
- NO
- t(r)
- 59 nS
- td(off)
- 334 nS
- td(on)
- 192 nS
- Mounting
- SMD
- RoHS Status
- RoHS-conform
- Technology
- IGBT
- Packaging
- TUBE
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Philippines
- ABC-Code
- A
- Supplier Lead time
- 14 weeks
Insulated Gate Bipolar Transistor (Trench IGBT), 180 A
FEATURES
- 1200 V trench and field stop technology
- Low switching losses
- Positive temperature coefficient
APPLICATIONS
- Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating
- Easy to assemble and parallel
- Direct mounting to heatsink