- Configuration
- N-CH
- V(DS)
- 100 V
- I(D)at Tc=25°C
- 180 A
- RDS(on)at 10V
- 1.7 mOhm
- Q(g)
- 168 nC
- P(tot)
- 375 W
- R(thJC)
- 0.4 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- OptiMOS
- Fast bodydiode
- NO
- Automotive
- NO
- Package
- TO-263-7
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP001227028
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Malaysia
- ABC-Code
- A
- Supplier Lead time
- 20 weeks
OptiMOS™ 5 100V power MOSFET IPB017N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.