IKW20N60H3
Supplier: Infineon Technologies
Matchcode: IKW20N60H3
Rutronik No.: IGBT1191
Unit Pack: 30
MOQ: 240
package: TO247-3
Packaging: TUBE
IGBT 600V 40A 1.95V TO247-3 Description
Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Summary of Features
- Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
- Low switching losses for high efficiency
- Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability
- Offering T j(max) of 175°C
- Packaged with and without freewheeling diode for increased design freedom
Benefits
- Excellent cost/performance
- Low switching and conduction losses
- Very good EMI behavior
- A small gate resistor for reduced delay time and voltage overshoot
- Smaller die sizes -> smaller packages
- Best-in-class IGBT efficiency and EMI behavior
Target Applications
- Welding Inverters
- Solar Inverters
- UPS
- All hard switching applications
Parameter
- V(CE)
- 600 V
- I(C)
- 40 A
- V(CEsat)
- 1.95 V
- Package
- TO247-3
- Bodydiode
- YES
- P(tot)
- 170 W
- Automotive
- NO
- t(r)
- 21 nS
- td(off)
- 227 nS
- td(on)
- 16 nS
- Mounting
- THT
- Leadfree Defin.
- 4
- Technology
- HighSpeed
- Packaging
- TUBE
- Supplier Part
- SP000702556
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- ABC-Code
- C
- Supplier Lead time
- 54 weeks
