IHW40N65R6
image shown is a representation only
Supplier: INFINEON
Matchcode: IHW40N65R6
Rutronik No.: IGBT2975
Unit Pack: 30
MOQ: 240
package: TO247-3
Packaging: TUBE
New Product
IGBT 650V 40A 1.29V TO247-3 Description
650 V, 40 A IGBT with monolithically integrated diode in TO-247 package
Reverse Conducting R6 650 V, 40 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology.
Thanks to best system performances and high compatibility with existing gate driver solution, 650 V R6 IGBT represents the optimal choice for soft switching topologies.
Summary of Features
- Very low VCEsat and low Eoff
- High ruggedness and stable temperature behavior
- Easy parallel switching capability due to positive temperature coefficient in VCEsat
- Frequency range 20-75 kHz
- Low EMI
- Very tight parameter distribution
- Maximum operating TJ of 175 °C
Benefits
- Lowest losses on IGBT, high system efficiency for higher power output
- Fast and easy replacement of predecessor R5 portfolio
- High device reliability
- Good EMI behaviour
Parameter
- V(CE)
- 650 V
- I(C)
- 83 A
- V(CEsat)
- 1.29 V
- Package
- TO247-3
- Bodydiode
- YES
- P(tot)
- 210 W
- Automotive
- NO
- t(r)
- 19 nS
- td(off)
- 211 nS
- td(on)
- 17 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- RC-Soft-Sw
- Packaging
- TUBE
- Supplier Part
- SP005399488
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- ABC-Code
- A
- Supplier Lead time
- 22 weeks
