IGB50N65H5ATMA1
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Description:
IGBT 650V 50A 1.65V TO263-3
Supplier:
INFINEON
Matchcode:
IGB50N65H5
Rutronik No.:
IGBT2473
Unit Pack:
1000
MOQ:
1000
package:
TO263-3
Packaging:
REEL
Datasheet
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Samples
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- Supplier Part
- SP001509614
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Malaysia
- ABC-Code
- A
- Supplier Lead time
- 21 weeks
Description:
Summary of Features
- 650 V breakthrough voltage
- Compared to Infineon’s High Speed 3 family
- Factor 2.5 lower Qg
- Factor 2 reduction in switching losses
- 200mV reduction in VCEsat
- Co-packed with Infineon’s new Rapid Si-diode technology
- Low COES/EOSS
- Mild positive temperature coefficient VCEsat
- Temperature stability of Vf
Benefits
- Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
- 50V increase in the bus voltage possible without compromising reliability
- Higher power density design
Target Applications
- battery-charger |delimiter|
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