IGB50N65H5
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Supplier: Infineon
Matchcode: IGB50N65H5
Rutronik No.: IGBT2473
Unit Pack: 1000
MOQ: 1000
package: TO263-3
Packaging: REEL
IGBT 650V 50A 1.65V TO263-3 Description
Description:
Summary of Features
- 650 V breakthrough voltage
- Compared to Infineon’s High Speed 3 family
- Factor 2.5 lower Qg
- Factor 2 reduction in switching losses
- 200mV reduction in VCEsat
- Co-packed with Infineon’s new Rapid Si-diode technology
- Low COES/EOSS
- Mild positive temperature coefficient VCEsat
- Temperature stability of Vf
Benefits
- Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
- 50V increase in the bus voltage possible without compromising reliability
- Higher power density design
Target Applications
- battery-charger |delimiter|
Parameter
- V(CE)
- 650 V
- I(C)
- 80 A
- V(CEsat)
- 1.65 V
- Package
- TO263-3
- Bodydiode
- NO
- P(tot)
- 270 W
- Automotive
- NO
- t(r)
- 31 nS
- td(off)
- 173 nS
- td(on)
- 23 nS
- Mounting
- SMD
- Leadfree Defin.
- 10
- Technology
- TRENCHST.5
- Packaging
- REEL
- Supplier Part
- SP001509614
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Malaysia
- ABC-Code
- A
- Supplier Lead time
- 28 weeks
