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  5. INFINEON Silicon Carbide Diodes

IDW40G65C5XKSA1

Description: SiC-D 650V 40A 1,5V TO247-3 Supplier: INFINEON Matchcode: IDW40G65C5 Rutronik No.: DSKY4878 Unit Pack: 30 MOQ: 240 package: TO247-3 Packaging: TUBE
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V(RRM)
650 V
I(F)per diode
40 A
I(FSM)
182 A
V(F)
1.5 V
Technology
5thinQ!SiC
Automotive
NO
Package
TO247-3
RoHS Status
RoHS-conform
Packaging
TUBE
Configuration
SINGLE
Mounting
THT
T(j) max
175 °C
Supplier Part
SP001632890
ECCN
EAR99
Customs Tariff No.
85411000000
Country
China
ABC-Code
A
Supplier Lead time
17 weeks
CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The new CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

Summary of Features

  • V br at 650V
  • Improved figure of merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Benefits

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

Target Applications

  • Telecom/server SMPS
  • Solar
  • UPS
  • PC power
  • LED/LCD TV
  • Motor drives
  • HID lighting
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8,37 $
2.008,80 $

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