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IDH20G65C5

INFINEON SP001632412

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INFINEON

SiC-Diode 20A 650V 1,80V TO220
Supplier: INFINEON
Matchcode: IDH20G65C5
Rutronik No.: DSKY5317
Unit Pack: 1
MOQ: 500
package: TO220-2
Packaging: INDIVIDUAL
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Datasheet
Datasheet

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3.68 $
1,840.00 $

SiC-Diode 20A 650V 1,80V TO220 Description

CoolSiC™ generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).

Summary of Features

  • V br at 650V
  • Improved figure of merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Benefits

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

Target Applications

  • Telecom/server SMPS
  • Solar
  • UPS
  • PC power
  • LED/LCD TV
  • Motor drives
  • HID lighting

Parameter

V(RRM)
600 V
I(F)per diode
20 A
I(FSM)
119 A
V(F)
1.8 V
Technology
CoolSiC G6
Automotive
NO
Package
TO220-2
RoHS Status
RoHS-conform
Packaging
INDIVIDUAL
Configuration
SINGLE
Mounting
THT
T(j) max
175 °C
Supplier Part
SP001632412
ECCN
EAR99
Customs Tariff No.
85411000000
Country
Malaysia
ABC-Code
C
Supplier Lead time
19 weeks
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