BFP650 H6327
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Supplier: INFINEON
Matchcode: BFP650 H6327
Rutronik No.: THF5328
Unit Pack: 3000
MOQ: 3000
package: SOT343
Packaging: REEL
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NPN RF-Trans 4V 150mA SOT343 Description
High Linearity Low Noise SiGe:C NPN RF Transistor
Summary of Features:
- Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz
- Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system
- Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system
- Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz
- Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz
- Based on Infineon´s reliable, high volume SiGe:C wafer technology
- Easy to use Pb-free (RoHS compliant) standard package with visible leads
- Qualification report according to AEC-Q101 available
- Driver amplifier
- ISM bands 434 and 868 MHz
- 1.9 GHz cordless phones
- CATV LNA
- Transmitter driver amplifier
- 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
- Output stage LNA for active antennas
- TV, GPS, SDARS
- 2.4 / 5 GHz WLAN
- 2.4 / 3.5 / 5 GHz WiMAX, etc.
- Suitable for 5 - 10.5 GHz oscillators
Parameter
- Polarity
- NPN
- U(cc) max
- 4 V
- Frequency f
- 50000 MHz
- P(out)
- 0.5 W
- Package
- SOT343
- Automotive
- AEC-Q(101)
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP000750406
- ECCN
- EAR99
- Customs Tariff No.
- 85412100000
- Country
- China
- ABC-Code
- B
- Supplier Lead time
- 6 weeks
