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BFP650 H6327

INFINEON SP000750406

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INFINEON

NPN RF-Trans 4V 150mA SOT343
Supplier: INFINEON
Matchcode: BFP650 H6327
Rutronik No.: THF5328
Unit Pack: 3000
MOQ: 3000
package: SOT343
Packaging: REEL
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0.2441 $
732.30 $

Prices

3,000 0.2441 $
6,000 0.2337 $
9,000 0.2284 $
15,000 0.2162 $
24,000 0.2058 $

NPN RF-Trans 4V 150mA SOT343 Description

High Linearity Low Noise SiGe:C NPN RF Transistor

Summary of Features:

  • Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz
  • Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system
  • Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system
  • Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz
  • Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz
  • Based on Infineon´s reliable, high volume SiGe:C wafer technology
  • Easy to use Pb-free (RoHS compliant) standard package with visible leads
  • Qualification report according to AEC-Q101 available
Target Applications:
  • Driver amplifier
  • ISM bands 434 and 868 MHz
  • 1.9 GHz cordless phones
  • CATV LNA
  • Transmitter driver amplifier
  • 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
  • Output stage LNA for active antennas
  • TV, GPS, SDARS
  • 2.4 / 5 GHz WLAN
  • 2.4 / 3.5 / 5 GHz WiMAX, etc.
  • Suitable for 5 - 10.5 GHz oscillators

Parameter

Polarity
NPN
U(cc) max
4 V
Frequency f
50000 MHz
P(out)
0.5 W
Package
SOT343
Automotive
AEC-Q(101)
RoHS Status
RoHS-conform
Packaging
REEL
Supplier Part
SP000750406
ECCN
EAR99
Customs Tariff No.
85412100000
Country
China
ABC-Code
B
Supplier Lead time
6 weeks
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