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STGD6M65DF2

ST STGD6M65DF2

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ST

IGBT 650V 6A 1.9V DPAK
Supplier: STMicroelectronics
Matchcode: STGD6M65DF2
Rutronik No.: IGBT2169
Unit Pack: 2500
MOQ: 2500
package: DPAK
Packaging: REEL
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0.73 $
1,825.00 $
Article with this quantity is not orderable.

IGBT 650V 6A 1.9V DPAK Description

Trench gate field-stop IGBT, M series 650 V, 6 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.


Key Features

  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 6 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode


Parameter

V(CE)
650 V
I(C)
6 A
V(CEsat)
1.9 V
Package
DPAK
Bodydiode
YES
P(tot)
88 W
Automotive
NO
t(r)
130 nS
td(off)
90 nS
td(on)
15 nS
Mounting
SMD
Leadfree Defin.
10
Technology
PowerMESH
Packaging
REEL
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
ABC-Code
B
Supplier Lead time
34 weeks
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