STGD6M65DF2
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Supplier: STMicroelectronics
Matchcode: STGD6M65DF2
Rutronik No.: IGBT2169
Unit Pack: 1
MOQ: 1
package: DPAK
Packaging: REEL
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IGBT 650V 6A 1.9V DPAK Description
Trench gate field-stop IGBT, M series 650 V, 6 A low loss
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Key Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 6 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
Parameter
- V(CE)
- 650 V
- I(C)
- 6 A
- V(CEsat)
- 1.9 V
- Package
- DPAK
- Bodydiode
- YES
- P(tot)
- 88 W
- Automotive
- NO
- t(r)
- 130 nS
- td(off)
- 90 nS
- td(on)
- 15 nS
- Mounting
- SMD
- Leadfree Defin.
- 10
- Technology
- PowerMESH
- Packaging
- REEL
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- Supplier Lead time
- 28 weeks
