IGB50N65S5
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Supplier: Infineon Technologies
Matchcode: IGB50N65S5
Rutronik No.: IGBT2472
Unit Pack: 1000
MOQ: 1000
package: TO263-3
Packaging: REEL
IGBT 650V 50A 1.35V TO263-3 Description
Description:
Summary of Features
- Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
- I C(n)=four times nominal current (100°C Tc)
- Soft current fall characteristics with no tail current
- Symmetrical, low voltage overshoot
- Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
- Maximum junction temperature Tvj=175°C
- Qualified according to JEDEC standards
Benefits
- VCE(peak) clamping circuits not required
- Suitable for use with single turn-on / turn-off gate resistor
- No need for gate clamping components
- Gate drivers with Miller clamping not required
- Reduction in the EMI filtering needed
- Excellent for paralleling
Target Applications
- battery-charger |delimiter|
Parameter
- V(CE)
- 650 V
- I(C)
- 80 A
- V(CEsat)
- 1.35 V
- Package
- TO263-3
- Bodydiode
- NO
- P(tot)
- 270 W
- Automotive
- NO
- t(r)
- 30 nS
- td(off)
- 139 nS
- td(on)
- 20 nS
- Mounting
- SMD
- Leadfree Defin.
- 4
- Technology
- TRENCHST.5
- Packaging
- REEL
- Supplier Part
- SP001502566
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Malaysia
- ABC-Code
- A
- Supplier Lead time
- 20 weeks
