FZ825R33HE4D
image shown is a representation only
1xIGBT-MOD 3300V 825A IHVB130
Supplier: INFINEON
Matchcode: FZ825R33HE4D
Rutronik No.: IGBT2994
Unit Pack: 2
MOQ: 2
package: IHVB130
Packaging: TRAY
New Product
1xIGBT-MOD 3300V 825A IHVB130 Description
3300 V, 825 A single switch IGBT module
Applications
IHV-B 3300 V, 3300 V, 825 A 130 mm single switch IGBT Module with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. The experienced solution for traction and industry applications.
Summary of Features
- High DC stability
- Best in class short circuit capability
- Low switching losses
- Tvj op = 150°C
- VCEsat with positive temperature coefficient
- AlSiC base plate for increased thermal cycling capability
- Package with CTI > 600
- Isolated base plate
- Diode Power 30% higher than IGBT
Benefits
- Unbeatable robustness
- Standardized housing
- 2 times higher Power Cycling Capability than Infineon IGBT3 and any competition 3.3 kV IHV
- Easy replacement of FZ1000R33HE3 and FZ800R33KF2C and as well any competition 800 to 1000 A 3.3 kV devices possible on high performance and housing compatibility
- Bigger Diode enables e.g. increased braking Power at traction applications
Parameter
- V(CE)
- 3300 V
- I(C)
- 825 A
- td(on)
- 1650 ns
- P(tot)
- 150 W
- t(r)
- NO ns
- V(CEsat)
- NO V
- Mounting
- IGBT4-E4
- Automotive
- NO
- Package
- IHVB130
- RoHS Status
- RoHS-conform
- Packaging
- TRAY
- Supplier Part
- SP005550793
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Hungary
- ABC-Code
- A
- Supplier Lead time
- 28 weeks