1EDS5663H
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Supplier: Infineon Technologies
Matchcode: 1EDS5663H
Rutronik No.: ICGDRV1246
Unit Pack: 1
MOQ: 1
package: DSO-16
Packaging: REEL
1xHSS GaN DRV iso 2.7V 8A LGA16 Description
GaN EiceDRIVER™ 1EDS5663H
Single-channel isolated gate driver IC for high voltage GaN switches
Description:
The new single-channel galvanically isolated gate driver IC component 1EDS5663H is a perfect fit for enhancement mode GaN HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.
Positive and negative gate drive currents:
Fast turn-on / turn-off GaN switch slew-rates
Firmly holds gate voltage at zero, during off-phase:
Avoids spurious GaN switch turn-on
Up to 50% lower dead-time losses
Configurable and constant GaN switching slew-rates, across wide range of switching frequency and duty-cycle:
Robust and energy efficient SMPS designs
Short time-to-market
Integrated galvanic isolation:
Robust operation in hard-switching applications
Safe isolation where needed
Low ohmic outputs:
Source: 0.85 Ω
Sink: 0.35 Ω
Single-channel galvanic isolation:
Functional: VIO= 1500 VDC
VIOWM = 510 Vrms (16-pin DSO)
VIOWM = 460 Vrms (LGA 5x5)
Reinforced: VIOTM = 8000 Vpk
(VDE 0884-10 pending)
VIOWM = 1420 VDC
CMTI min: 200V/ns
Timing:
Minimum output pulse width: 18 ns
Propagation delay accuracy: 13 ns
- Totem-pole PFCs
- Vienna rectifiers
- Multi-level topologies
- Resonant LLC
- Server power supply
- Datacom
- Telecom DC-DC
- Adapter power supply
- Charger power supply
- Wireless charging
Parameter
- Application
- MOSFET DRV
- Channels
- 1
- Mounting
- SMD
- Technology
- GaN
- Automotive
- NO
- Package
- DSO-16
- Leadfree Defin.
- 4
- Packaging
- REEL
- Supplier Part
- SP002753980
- ECCN
- EAR99
- Customs Tariff No.
- 85423919000
- Country
- Indonesia
- Supplier Lead time
- 18 weeks
