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STPSC10H065GY-TR

ST STPSC10H065GY-TR

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ST

SiC-D 650V 10A 1.75V D2PAK
Supplier: STMicroelectronics
Matchcode: STPSC10H065GY
Rutronik No.: DSKY4710
Unit Pack: 1000
MOQ: 1000
package: D2PAK
Packaging: REEL
On request
4.85 $
4,850.00 $

Prices

1,000 4.85 $
2,000 3.57 $

SiC-D 650V 10A 1.75V D2PAK Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.


Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • AEC-Q101 qualified
  • PPAP capable


Parameter

V(RRM)
650 V
Configuration
SINGLE
I(F)per diode
10 A
V(F)
1.56 V
Mounting
SMT
Technology
SiC
T(j) max
175 °C
I(FSM)
22 A
Automotive
AEC-Q(101)
Package
D2PAK
Leadfree Defin.
RoHS-conform
Packaging
REEL
ECCN
EAR99
Customs Tariff No.
85411000000
Country
Taiwan
Supplier Lead time
102 weeks
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