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SiC-D 650V 10A 1.75V D2PAK
Rutronik No.: DSKY4710
Unit Pack: 1000
SiC-D 650V 10A 1.75V D2PAK Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications.
Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- AEC-Q101 qualified
- PPAP capable
- 650 V
- I(F)per diode
- 10 A
- 1.56 V
- T(j) max
- 175 °C
- 22 A
- Leadfree Defin.
- Customs Tariff No.
- Supplier Lead time
- 102 weeks