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STGWA80H65FB

ST STGWA80H65FB

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ST

IGBT 650V 80A 1,8V TO247 long
Supplier: STMicroelectronics
Matchcode: STGWA80H65FB
Rutronik No.: IGBT1889
Unit Pack: 30
MOQ: 600
package: TO247 long
Packaging: TUBE
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
4.84 $
2,904.00 $

IGBT 650V 80A 1,8V TO247 long Description

Trench gate field-stop IGBT, HB series 650 V, 80 A high Speed

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.


Key Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 1.6 V(typ) @ IC = 80 A
  • Safe paralleling
  • Tight parameter distribution
  • Low thermal resistance
  • Very fast soft recovery antiparallel Diode

Parameter

V(CE)
650 V
I(C)
80 A
V(CEsat)
1.8 V
Package
TO247 long
Bodydiode
NO
P(tot)
469 W
Automotive
NO
t(r)
52 nS
td(off)
280 nS
td(on)
84 nS
Mounting
THT
Leadfree Defin.
10
Technology
HB Series
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
Supplier Lead time
34 weeks
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