STGW60H65DFB
image shown is a representation only
Supplier: STMicroelectronics
Matchcode: STGW60H65DFB
Rutronik No.: IGBT1473
Unit Pack: 1
MOQ: 1
package: TO247-3
Packaging: TUBE
Best Choice
IGBT 650V 80A 1,75V TO247-3 Description
Trench gate field-stop IGBT, HB series 650 V, 60 A high Speed
These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)= 1.6 V (typ.) @ IC= 60 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Parameter
- V(CE)
- 650 V
- I(C)
- 60 A
- V(CEsat)
- 1.6 V
- Package
- TO247-3
- Bodydiode
- YES
- P(tot)
- 375 W
- Automotive
- NO
- t(r)
- 22 nS
- td(off)
- 160 nS
- td(on)
- 51 nS
- Mounting
- THT
- Leadfree Defin.
- 10
- Technology
- FieldStop
- Packaging
- TUBE
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- ABC-Code
- A
- Supplier Lead time
- 34 weeks
