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STGW60H65DFB

ST STGW60H65DFB

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ST

IGBT 650V 80A 1,75V TO247-3
Supplier: STMicroelectronics
Matchcode: STGW60H65DFB
Rutronik No.: IGBT1473
Unit Pack: 30
MOQ: 600
package: TO247-3
Packaging: TUBE
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
3.27 $
1,962.00 $

IGBT 650V 80A 1,75V TO247-3 Description

Trench gate field-stop IGBT, HB series 650 V, 60 A high Speed

These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.


Key Features

  • Maximum junction temperature: TJ= 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat)= 1.6 V (typ.) @ IC= 60 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode


Parameter

V(CE)
650 V
I(C)
60 A
V(CEsat)
1.6 V
Package
TO247-3
Bodydiode
YES
P(tot)
375 W
Automotive
NO
t(r)
22 nS
td(off)
160 nS
td(on)
51 nS
Mounting
THT
Leadfree Defin.
10
Technology
FieldStop
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
Malaysia
ABC-Code
A
Supplier Lead time
34 weeks
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