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STGW40H120DF2

ST STGW40H120DF2

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ST

IGBT 1200V 80A 2.1V TO247-3
Supplier: STMicroelectronics
Matchcode: STGW40H120DF2
Rutronik No.: IGBT1410
Unit Pack: 30
MOQ: 30
package: TO247-3
Packaging: TUBE
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7.26 $
217.80 $

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30 7.26 $
60 6.81 $
90 6.70 $
120 6.58 $
180 6.19 $

IGBT 1200V 80A 2.1V TO247-3 Description

Trench gate field-stop IGBT, H series 1200 V, 40 A high Speed

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.


Key Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 2.1 V (typ.) @ IC = 40 A
  • 5 μs minimum short circuit withstand time at TJ=150 °C
  • Safe paralleling
  • Very fast recovery antiparallel diode
  • Low thermal resistance

Parameter

V(CE)
1200 V
I(C)
80 A
V(CEsat)
2.1 V
Package
TO247-3
Bodydiode
YES
P(tot)
330 W
Automotive
NO
t(r)
37 nS
td(off)
152 nS
td(on)
18 nS
Mounting
THT
Leadfree Defin.
10
Technology
ULTRA FAST
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
ABC-Code
A
Supplier Lead time
34 weeks
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