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STGW20H65FB

ST STGW20H65FB

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ST

IGBT 650V 20A 1,55V TO247-3
Supplier: STMicroelectronics
Matchcode: STGW20H65FB
Rutronik No.: IGBT1885
Unit Pack: 30
MOQ: 600
package: TO247-3
Packaging: TUBE
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
1.62 $
972.00 $

IGBT 650V 20A 1,55V TO247-3 Description

Trench gate field-stop IGBT, HB series 650 V, 20 A high Speed

These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.


Key Features

  • Maximum junction temperature: TJ= 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat)= 1.55 V (typ.) @ IC= 20 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Lead free package


Parameter

V(CE)
650 V
I(C)
20 A
V(CEsat)
1.65 V
Package
TO247-3
Bodydiode
NO
P(tot)
168 W
Automotive
NO
t(r)
11 nS
td(off)
139 nS
td(on)
30 nS
Mounting
THT
Leadfree Defin.
10
Technology
high speed
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
Supplier Lead time
34 weeks
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