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STGP30M65DF2

ST STGP30M65DF2

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ST

IGBT 650V 30A 1,95V TO220-3
Supplier: STMicroelectronics
Matchcode: STGP30M65DF2
Rutronik No.: IGBT1884
Unit Pack: 50
MOQ: 1000
package: TO220-3
Packaging: TUBE
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
0.9752 $
975.20 $

IGBT 650V 30A 1,95V TO220-3 Description

Trench gate field-stop IGBT M series, 650 V 30 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.


Key Features

  • 6 µs of minimum short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
  • Tight parameters distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode


Parameter

V(CE)
650 V
I(C)
30 A
V(CEsat)
1.95 V
Package
TO220-3
Bodydiode
YES
P(tot)
258 W
Automotive
NO
t(r)
13.4 nS
td(off)
115 nS
td(on)
31.6 nS
Mounting
THT
Leadfree Defin.
10
Technology
Fast
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
ABC-Code
B
Supplier Lead time
34 weeks
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