Cart

STGB10M65DF2

ST STGB10M65DF2

image shown is a representation only

ST

IGBT 650V 10A 1,55V D2PAK
Supplier: STMicroelectronics
Matchcode: STGB10M65DF2
Rutronik No.: IGBT1865
Unit Pack: 1000
MOQ: 1000
package: D2PAK
Packaging: REEL
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
0.9546 $
954.60 $

Prices

1,000 0.9546 $
2,000 0.8959 $
3,000 0.8813 $
4,000 0.8151 $

IGBT 650V 10A 1,55V D2PAK Description

Trench gate field-stop IGBT M series, 650 V 10 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.


Key Features

  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 10 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
  • Maximum junction temperature: TJ = 175 °C


Parameter

V(CE)
650 V
I(C)
10 A
V(CEsat)
1.55 V
Package
D2PAK
Bodydiode
YES
P(tot)
65 W
Automotive
NO
t(r)
6 nS
td(off)
91 nS
td(on)
19 nS
Mounting
SMD
Leadfree Defin.
10
Technology
Fast
Packaging
REEL
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
Supplier Lead time
34 weeks
With the articles in your cart you can send us an order, or - if you have further questions - a non-binding request.

Password forgotten?