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EVALPWD13F60

ST EVALPWD13F60

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ST

Full Bridge Drv 600V 8A VFQFPN
Supplier: STMicroelectronics
Matchcode: EVALPWD13F60
Rutronik No.: ICGDRV1230
Unit Pack: 1
MOQ: 1
package: VFQFPN
Packaging: INDIVIDUAL
On request
45.14 $
45.14 $

Prices

1 45.14 $
2 42.36 $
3 41.67 $
6 40.97 $
11 38.54 $

Full Bridge Drv 600V 8A VFQFPN Description

High-voltage evaluation board for the PWD13F60

The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.


The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows loads in a tiny space to be driven efficiently.


The PWD13F60 accepts a supply voltage (VCC) extending over a wide range and is protected by a low voltage UVLO detection on the supply voltage.


The input pin extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.


The EVALPWD13F60 is 48 x 53 mm wide, FR-4 PCB resulting in an Rth(J-A) of 18 °C/W, capable to drive loads up to 2 ARMS, without forced airflow cooling.


Both controlling and power signals are available on pin strip for easy connection to customer's board.


Key Features


  • Power system-in-package integrating gate drivers and high-voltage power MOSFETs:
    • Low RDS(on) = 320 mΩ
    • BVDSS = 600 V
  • Suitable for operating as:
    • Full-bridge
    • Dual independent half-bridges
  • Wide input supply voltage down to 6.5 V
  • UVLO protection on supply voltage
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Interlocking function to prevent cross conduction
  • Internal bootstrap diodes
  • QFN (10x13 mm) package
  • Very compact layout
  • RoHS compliant


Parameter

Automotive
NO
Package
VFQFPN
Leadfree Defin.
RoHS-conform
Packaging
INDIVIDUAL
ECCN
EAR99
Customs Tariff No.
85437090990
Country
China
Supplier Lead time
18 weeks
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