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IKW75N65EL5

INFINEON

IGBT 650V 75A 1,1V TO247-3
Supplier: Infineon Technologies
Matchcode: IKW75N65EL5
Rutronik No.: IGBT2016
Unit Pack: 30
MOQ: 240
package: TO247-3
Packaging: TUBE
On request
6.09 $
1,461.60 $

Prices

240 6.09 $
600 5.98 $
780 5.89 $

IGBT 650V 75A 1,1V TO247-3 Description

Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.10V for 75A IGBT.

Summary of Features

  • Lowest saturation voltage V CE(sat) of only 1.05V
  • Low switching losses of 1.6mJ @ 25°C for 30A IGBT
  • High thermal stability of electrical parameters - only 2% drift with T j increase from 25°C to 175°C
  • Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package

Benefits

  • Higher efficiency for 50Hz
  • Longer lifetime and higher reliability of IGBT
  • High design reliability due to stable thermal performance

Target Applications

  • UPS
  • Solar
  • Welding

Parameter

V(CE)
650 V
I(C)
75 A
V(CEsat)
1.1 V
Package
TO247-3
Bodydiode
YES
P(tot)
268 W
Automotive
NO
t(r)
50 nS
td(off)
275 nS
td(on)
40 nS
Mounting
THT
Leadfree Defin.
RoHS-conform
Technology
fast
Packaging
TUBE
Supplier Part
SP001174464
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
Supplier Lead time
54 weeks
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