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IKW40N120T2

INFINEON

IGBT 1200V 75A 2.2V TO247-3
Supplier: Infineon Technologies
Matchcode: IKW40N120T2
Rutronik No.: TMOSP8409
Unit Pack: 30
MOQ: 30
package: TO247-3
Packaging: TUBE
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In Stock
4.83 $
144.90 $

Prices

30 4.83 $
120 4.75 $
240 4.67 $
600 4.60 $
780 4.52 $

IGBT 1200V 75A 2.2V TO247-3 Description

Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Summary of Features

  • Lowest V ce(sat) drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600V and 1200V for flexibility of design
  • High device reliability

Target Applications

  • UPS
  • Solar inverters
  • Motor control
  • Major home appliances
  • Welding
  • Other hard switching applications

Parameter

V(CE)
1200 V
I(C)
75 A
V(CEsat)
2.2 V
Package
TO247-3
Bodydiode
YES
P(tot)
480 W
Automotive
NO
t(r)
28 nS
td(off)
314 nS
td(on)
33 nS
Mounting
THT
Leadfree Defin.
RoHS-conform
Technology
TrenchStop
Packaging
TUBE
Supplier Part
SP000244962
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
ABC-Code
A
Supplier Leadtime
16 weeks
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