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IKW40N120H3

INFINEON SP000674416

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INFINEON

IGBT 1200V 80A 2.05V TO247-3
Supplier: INFINEON
Matchcode: IKW40N120H3
Rutronik No.: IGBT1159
Unit Pack: 30
MOQ: 30
package: TO247-3
Packaging: TUBE
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Datasheet
Datasheet

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7.11 $
213.30 $

Prices

30 7.11 $
60 6.55 $
90 6.39 $
120 6.30 $
150 5.79 $

IGBT 1200V 80A 2.05V TO247-3 Description

Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.

Summary of Features

  • Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
  • Low switching losses for high efficiency
  • Excellent V CEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability
  • Offering T j(max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom

Benefits

  • Excellent cost/performance
  • Low switching and conduction losses
  • Very good EMI behavior
  • A small gate resistor for reduced delay time and voltage overshoot
  • Smaller die sizes -> smaller packages
  • Best-in-class IGBT efficiency and EMI behavior

Parameter

V(CE)
1200 V
I(C)
80 A
V(CEsat)
2.40 V
Package
TO247-3
Bodydiode
YES
P(tot)
483 W
Automotive
NO
t(r)
57 nS
td(off)
290 nS
td(on)
30 nS
Mounting
THT
RoHS Status
RoHS-conform
Technology
HighSpeed
Packaging
TUBE
Supplier Part
SP000674416
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
ABC-Code
A
Supplier Lead time
24 weeks
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