IKW40N120H3
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Supplier: INFINEON
Matchcode: IKW40N120H3
Rutronik No.: IGBT1159
Unit Pack: 30
MOQ: 30
package: TO247-3
Packaging: TUBE
IGBT 1200V 80A 2.05V TO247-3 Description
Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.
Summary of Features
- Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
- Low switching losses for high efficiency
- Excellent V CEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability
- Offering T j(max) of 175°C
- Packaged with and without freewheeling diode for increased design freedom
Benefits
- Excellent cost/performance
- Low switching and conduction losses
- Very good EMI behavior
- A small gate resistor for reduced delay time and voltage overshoot
- Smaller die sizes -> smaller packages
- Best-in-class IGBT efficiency and EMI behavior
Parameter
- V(CE)
- 1200 V
- I(C)
- 80 A
- V(CEsat)
- 2.40 V
- Package
- TO247-3
- Bodydiode
- YES
- P(tot)
- 483 W
- Automotive
- NO
- t(r)
- 57 nS
- td(off)
- 290 nS
- td(on)
- 30 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- HighSpeed
- Packaging
- TUBE
- Supplier Part
- SP000674416
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- ABC-Code
- A
- Supplier Lead time
- 24 weeks
