- V(CE)
- 1200 V
- I(C)
- 40 A
- V(CEsat)
- 1.85 V
- Package
- TO247-3
- Bodydiode
- YES
- P(tot)
- 500 W
- Automotive
- NO
- t(r)
- 39 nS
- td(off)
- 315 nS
- td(on)
- 27 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- IGBT6
- Packaging
- TUBE
- Supplier Part
- SP001666622
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- ABC-Code
- A
- Supplier Lead time
- 21 weeks
Description:
Summary of Features
- High efficiency in hard switching and resonant topologies
- Low saturation voltage if 1.85 V combined with low switching losses
- Easy paralleling capability due to positive temperature coefficient in VCEsat
- Low EMI
- Low Gate Charge QG
- Very soft, fast recovery anti-parallel diode
- High ruggedness, temperature stable behaviour
- Very tight parameter distribution
Benefits
- Lowest losses on IGBT, high system efficiency for higher power output
- Fast and easy replacement of predecessor H3 technology
- High device reliability and lifetime expectancy
Target Applications
- battery-charger