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IDW20G120C5B

INFINEON

SiC-D 1200 20A 1,4V TO247-3
Supplier: Infineon Technologies
Matchcode: IDW20G120C5B
Rutronik No.: DSKYP5505
Unit Pack: 30
MOQ: 30
package: TO247-3
Packaging: TUBE
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In Stock
12.08 $
362.40 $

Prices

30 12.08 $
60 11.87 $
120 11.67 $
240 11.46 $
270 11.26 $

SiC-D 1200 20A 1,4V TO247-3 Description

With CoolSiC™ Generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineon’s thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC™ generations.

Summary of Features

  • Best-in-class forward voltage (V F)
  • No reverse recovery charge
  • Mild positive temperature dependency of V F
  • Best-in-class surge current capability
  • Excellent thermal performance
  • Up to 40A rated diode

Benefits

  • Highest system efficiency
  • Improved system efficiency at low switching frequencies
  • Increased power density at high switching frequencies
  • Higher system reliability
  • Reduced EMI

Target Applications

  • Solar inverters
  • UPS
  • 3-phase SMPS
  • Motor drives

Parameter

Configuration
DUAL
V(RRM)
1200 V
I(F)per diode
10 A
Package
TO247-3
Automotive
NO
Technology
thinQ!SiC5
V(F)
1.4 V
I(FSM)
190 A
Packaging
TUBE
Mounting
THT
Leadfree Defin.
RoHS-conform
Supplier Part
SP001020716
ECCN
EAR99
Customs Tariff No.
85411000000
Country
China
ABC-Code
A
Supplier Leadtime
16 weeks
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