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IDW16G65C5

INFINEON

SiC-D. 650V 16A 1,5V TO247-3
Supplier: Infineon Technologies
Matchcode: IDW16G65C5
Rutronik No.: DSKYP5414
Unit Pack: 1
MOQ: 1
package: TO247-3
Packaging: TUBE
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In Stock
4.86 $
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1 4.86 $
90 4.78 $
240 4.70 $
480 4.62 $
720 4.53 $

SiC-D. 650V 16A 1,5V TO247-3 Description

CoolSiC™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The new CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

Summary of Features

  • V br at 650V
  • Improved Figure of Merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Benefits

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

Target Applications

  • Telecom/Server SMPS
  • Solar
  • UPS
  • PC Power
  • LED/LCD TV
  • Motor Drives
  • HID Lighting

Parameter

Configuration
SINGLE
V(RRM)
650 V
I(F)per diode
16 A
Package
TO247-3
Automotive
NO
Technology
thinQ! SiC
V(F)
1.5 V
I(FSM)
THT A
Packaging
TUBE
Mounting
THT
Leadfree Defin.
RoHS-conform
Supplier Part
SP000937048
ECCN
EAR99
Customs Tariff No.
85411000000
Country
China
ABC-Code
A
Supplier Leadtime
10 weeks
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