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IDM02G120C5

INFINEON SP001127112

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INFINEON

SiC-D 2A 1200V 1,65V TO252-2
Supplier: Infineon Technologies
Matchcode: IDM02G120C5
Rutronik No.: DSKY5031
Unit Pack: 2500
MOQ: 2500
package: TO252
Packaging: REEL
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1.66 $
4,150.00 $

SiC-D 2A 1200V 1,65V TO252-2 Description

With CoolSiC™ generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineon’s thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC™ generations.

Summary of Features

  • Best-in-class forward voltage (V F)
  • No reverse recovery charge
  • Mild positive temperature dependency of V F
  • Best-in-class surge current capability
  • Excellent thermal performance
  • Up to 40A rated diode

Benefits

  • Highest system efficiency
  • Improved system efficiency at low switching frequencies
  • Increased power density at high switching frequencies
  • Higher system reliability
  • Reduced EMI

Target Applications

  • Solar inverters
  • UPS
  • 3-phase SMPS
  • Motor drives

Parameter

V(RRM)
1200 V
Configuration
SINGLE
I(F)per diode
2 A
V(F)
1.65 V
Mounting
SMD
Technology
5thinQ!SiC
T(j) max
175 °C
I(FSM)
37 A
Automotive
NO
Package
TO252
Leadfree Defin.
RoHS-conform
Packaging
REEL
Supplier Part
SP001127112
Customs Tariff No.
85411000000
Country
Malaysia
ABC-Code
A
Supplier Lead time
18 weeks
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