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IDH20G120C5

INFINEON

SiC-D. 1200V 20A 2,6V TO220-2
Supplier: Infineon Technologies
Matchcode: IDH20G120C5
Rutronik No.: DSKYP5568
Unit Pack: 500
MOQ: 500
package: TO220-2
Packaging: TUBE
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In Stock
10.50 $
5,250.00 $

SiC-D. 1200V 20A 2,6V TO220-2 Description

With CoolSiC™ Generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineon’s thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC™ generations.

Summary of Features

  • Best-in-class forward voltage (V F)
  • No reverse recovery charge
  • Mild positive temperature dependency of V F
  • Best-in-class surge current capability
  • Excellent thermal performance
  • Up to 40A rated diode

Benefits

  • Highest system efficiency
  • Improved system efficiency at low switching frequencies
  • Increased power density at high switching frequencies
  • Higher system reliability
  • Reduced EMI

Target Applications

  • Solar inverters
  • UPS
  • 3-phase SMPS
  • Motor drives

Parameter

Configuration
SINGLE
V(RRM)
1200 V
I(F)per diode
20 A
Package
TO220-2
Automotive
NO
Technology
thinQ! SiC
V(F)
2.6 V
I(FSM)
168 A
Packaging
TUBE
Mounting
THT
Leadfree Defin.
RoHS-conform
Supplier Part
SP001347054
ECCN
EAR99
Customs Tariff No.
85411000000
Country
Malaysia
Supplier Leadtime
16 weeks
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