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IDH10SG60C

INFINEON

S-Diode 600V 10A 2.10V TO220-2
Supplier: Infineon Technologies
Matchcode: IDH10SG60C
Rutronik No.: DSKYP5168
Unit Pack: 50
MOQ: 500
package: TO220-2
Packaging: TUBE
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On request
3.03 $
1,515.00 $

Prices

500 3.03 $
750 2.98 $

S-Diode 600V 10A 2.10V TO220-2 Description

The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The Generation 3 is based on the same technology platform as Generation 2 with the introduction, at package level, of the so called diffusion soldering.

Summary of Features

  • Benchmark switching behavior
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)

Benefits

  • System efficiency improvement compared to Si diodes
  • Reduced cooling requirements
  • Enabling higher frequency/increased power density
  • Higher system reliability due to lower operating temperature
  • Reduced EMI

Target Applications

  • Server
  • Telecom
  • Solar
  • Lighting
  • PC Power
  • AC-DC

Parameter

Configuration
SINGLE
V(RRM)
600 V
I(F)per diode
10 A
Package
TO220-2
Automotive
NO
Technology
SiC
V(F)
2.1 V
I(FSM)
51 A
Packaging
TUBE
Mounting
THT
Leadfree Defin.
RoHS-conform
Supplier Part
SP000607040
ECCN
EAR99
Customs Tariff No.
85411000000
Country
Malaysia
ABC-Code
A
Supplier Leadtime
10 weeks
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