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IDH10G120C5

INFINEON

SiC-Diode 1200V 10A 1,8V TO220
Supplier: Infineon Technologies
Matchcode: IDH10G120C5
Rutronik No.: DSKY4617
Unit Pack: 500
MOQ: 500
package: TO220-2
Packaging: TUBE
Topseller
On request
10.50 $
5,250.00 $

SiC-Diode 1200V 10A 1,8V TO220 Description

Description:

Summary of Features

  • Best-in-class forward voltage (VF)
  • No reverse recovery charge
  • Mild positive temperature dependency of VF
  • Best-in-class surge current capability
  • Excellent thermal performance

Benefits

  • Highest system efficiency
  • Improved system efficiency at low switching frequencies
  • Increased power density at high switching frequencies
  • Higher system reliability
  • Reduced EMI

Target Applications

  • Storage
  • AUX Power

Parameter

V(RRM)
1200 V
Configuration
SINGLE
I(F)per diode
10 A
V(F)
1.8 V
Mounting
THT
Technology
5thinQ!SiC
T(j) max
175 °C
I(FSM)
99 A
Automotive
NO
Package
TO220-2
Leadfree Defin.
RoHS-conform
Packaging
TUBE
Supplier Part
SP001079722
Customs Tariff No.
85411000000
Country
Malaysia
Supplier Lead time
18 weeks
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