Cart

IDH08G120C5

INFINEON

SiC-D 1200V 8A 1,7V TO220-2
Supplier: Infineon Technologies
Matchcode: IDH08G120C5
Rutronik No.: DSKY4824
Unit Pack: 50
MOQ: 50
package: TO220-2
Packaging: TUBE
In Stock
5.07 $
253.50 $

Prices

50 5.07 $
100 4.94 $
250 4.81 $

SiC-D 1200V 8A 1,7V TO220-2 Description

With CoolSiC™ generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineon’s thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC™ generations.

Summary of Features

  • Best-in-class forward voltage (V F)
  • No reverse recovery charge
  • Mild positive temperature dependency of V F
  • Best-in-class surge current capability
  • Excellent thermal performance
  • Up to 40A rated diode

Benefits

  • Highest system efficiency
  • Improved system efficiency at low switching frequencies
  • Increased power density at high switching frequencies
  • Higher system reliability
  • Reduced EMI

Target Applications

  • Solar inverters
  • UPS
  • 3-phase SMPS
  • Motor drives

Parameter

V(RRM)
1200 V
Configuration
SINGLE
I(F)per diode
8 A
V(F)
1.7 V
Mounting
SMT
Technology
5thinQ!SiC
T(j) max
175 °C
I(FSM)
70 A
Automotive
NO
Package
TO220-2
Leadfree Defin.
RoHS-conform
Packaging
TUBE
Supplier Part
SP001194252
Customs Tariff No.
85411000000
Country
Malaysia
ABC-Code
A
Supplier Lead time
18 weeks
With the articles in your cart you can send us an order, or - if you have further questions - a non-binding request.

Password forgotten?