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IDH05G120C5

INFINEON SP000974868

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INFINEON

SiC-D 1200V 5A 2,6V TO220-2
Supplier: Infineon Technologies
Matchcode: IDH05G120C5
Rutronik No.: DSKY4622
Unit Pack: 50
MOQ: 500
package: TO220
Packaging: TUBE
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3.42 $
1,710.00 $

Prices

500 3.42 $
750 3.36 $

SiC-D 1200V 5A 2,6V TO220-2 Description

With CoolSiC™ Generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineon’s thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC™ generations.

Summary of Features

  • Best-in-class forward voltage (V F)
  • No reverse recovery charge
  • Mild positive temperature dependency of V F
  • Best-in-class surge current capability
  • Excellent thermal performance
  • Up to 40A rated diode

Benefits

  • Highest system efficiency
  • Improved system efficiency at low switching frequencies
  • Increased power density at high switching frequencies
  • Higher system reliability
  • Reduced EMI

Target Applications

  • Solar inverters
  • UPS
  • 3-phase SMPS
  • Motor drives

Parameter

Configuration
SINGLE
V(RRM)
1200 V
I(F)per diode
5 A
Package
TO220
Automotive
NO
Technology
5thinQ!SiC
T(j) max
175 °C
V(F)
2.6 V
I(FSM)
59 A
Packaging
TUBE
Mounting
THT
Leadfree Defin.
RoHS-conform
Supplier Part
SP000974868
ECCN
EAR99
Customs Tariff No.
85411000000
Country
Malaysia
ABC-Code
C
Supplier Leadtime
16 weeks
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