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IDH04G65C6 NPI

INFINEON

SiC-Diode 4A 650V 1.25V TO220-2
Supplier: Infineon Technologies
Matchcode: IDH04G65C6 NPI
Rutronik No.: DSKY5009
Unit Pack: 1
MOQ: 1
package: TO220-2
Packaging: INDIVIDUAL
In Stock
4.63 $
4.63 $

SiC-Diode 4A 650V 1.25V TO220-2 Description

6th Generation CoolSiC™



650V SiC Schottky Diode

The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier
diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further
advancements like a novel Schottky metal system. The result is a family of products with improved efficiency
over all load conditions, resulting from a lower figure of merit (Qc x VF). The CoolSiC™ Schottky diode 650 V G6
has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent
application requirements in this voltage range.

Parameter

V(RRM)
650 V
Configuration
SINGLE
I(F)per diode
4 A
V(F)
1.25 V
Mounting
THT
Technology
CoolSiC G6
T(j) max
175 °C
I(FSM)
29 A
Automotive
NO
Package
TO220-2
Leadfree Defin.
4
Packaging
INDIVIDUAL
Supplier Part
SP001600960
ECCN
EAR99
Customs Tariff No.
85411000000
Country
Malaysia
Supplier Lead time
10 weeks
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