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IDB06S60C

INFINEON SP001139900

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INFINEON

SIC-Diode 600V 6A 1.70V TO263
Supplier: Infineon Technologies
Matchcode: IDB06S60C
Rutronik No.: DSKY4762
Unit Pack: 1000
MOQ: 1000
package: D2PAK
Packaging: REEL
On request
Obsolete Part
Supplier Last Time Buy: 08/31/2017
5.32 $
5,320.00 $

Prices

1,000 5.32 $
2,000 3.90 $
Article with this quantity is not orderable.

SIC-Diode 600V 6A 1.70V TO263 Description

The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The low V f values characterizing this family of products, make it particularly suitable for applications requiring high load efficiency. With the Generation 2 Infineon introduced a new design concept consisting in regularly distributed p-doped areas, in conjunction with the pure Schottky ones: the so-called “merged pn-structure” (MPS).

Summary of Features

  • Benchmark switching behavior
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)

Benefits

  • System efficiency improvement compared to Si diodes
  • Reduced cooling requirements
  • Enabling higher frequency/increased power density
  • Higher system reliability due to lower operating temperature
  • Reduced EMI

Target Applications

  • Server
  • Telecom
  • Solar
  • UPS
  • PC power
  • Motor drives
  • Lighting

Parameter

V(RRM)
600 V
Configuration
SINGLE
I(F)per diode
6 A
V(F)
1.7 V
Mounting
SMT
Technology
2thinQ!SiC
T(j) max
175 °C
I(FSM)
46 A
Automotive
NO
Package
D2PAK
Leadfree Defin.
RoHS-conform
Packaging
REEL
Supplier Part
SP001139900
Customs Tariff No.
85411000000
Country
Malaysia
ABC-Code
A
Supplier Lead time
14 weeks
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