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STGYA120M65DF2

ST STGYA120M65DF2

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ST

IGBT 650V 120A 1,95V TO-247MAXL
Supplier: STMicroelectronics
Matchcode: STGYA120M65DF2
Rutronik No.: IGBT2238
Unit Pack: 30
MOQ: 600
package: TO247MAX L
Packaging: TUBE
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
9.73 $
5,838.00 $

IGBT 650V 120A 1,95V TO-247MAXL Description

Trench gate field-stop IGBT, M series 650 V, 120 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.


Key Features

  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.65 V (typ.) @ IC = 120 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
  • Maximum junction temperature: TJ = 175 °C


Parameter

V(CE)
650 V
I(C)
120 A
V(CEsat)
1.95 V
Package
TO247MAX L
Bodydiode
YES
P(tot)
625 W
Automotive
NO
t(r)
38 nS
td(off)
185 nS
td(on)
66 nS
Mounting
THT
Leadfree Defin.
10
Technology
Trench
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
ABC-Code
A
Supplier Lead time
34 weeks
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