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STGWA80H65DFB

ST STGWA80H65DFB

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ST

IGBT 650V 80A 1,8V TO247 long D
Supplier: STMicroelectronics
Matchcode: STGWA80H65DFB
Rutronik No.: IGBT1888
Unit Pack: 30
MOQ: 600
package: TO247 long
Packaging: TUBE
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
5.10 $
3,060.00 $

IGBT 650V 80A 1,8V TO247 long D Description

Trench gate field-stop IGBT, HB series 650 V, 80 A high Speed

These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.


Key Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 1.6 V (typ.) @ IC = 80 A
  • Safe paralleling
  • Tight parameter distribution
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode


Parameter

V(CE)
650 V
I(C)
80 A
V(CEsat)
1.8 V
Package
TO247 long
Bodydiode
YES
P(tot)
469 W
Automotive
NO
t(r)
52 nS
td(off)
328 nS
td(on)
77 nS
Mounting
THT
Leadfree Defin.
10
Technology
HB Series
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
Supplier Lead time
34 weeks
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