STGWA80H65DFB
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Supplier: STMicroelectronics
Matchcode: STGWA80H65DFB
Rutronik No.: IGBT1888
Unit Pack: 30
MOQ: 600
package: TO247 long
Packaging: TUBE
IGBT 650V 80A 1,8V TO247 long D Description
Trench gate field-stop IGBT, HB series 650 V, 80 A high Speed
These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.6 V (typ.) @ IC = 80 A
- Safe paralleling
- Tight parameter distribution
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Parameter
- V(CE)
- 650 V
- I(C)
- 80 A
- V(CEsat)
- 1.8 V
- Package
- TO247 long
- Bodydiode
- YES
- P(tot)
- 469 W
- Automotive
- NO
- t(r)
- 52 nS
- td(off)
- 328 nS
- td(on)
- 77 nS
- Mounting
- THT
- Leadfree Defin.
- 10
- Technology
- HB Series
- Packaging
- TUBE
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- Supplier Lead time
- 34 weeks
