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STGW25M120DF3

ST STGW25M120DF3

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ST

IGBT 1200V 25A 1,85V TO-247
Supplier: STMicroelectronics
Matchcode: STGW25M120DF3
Rutronik No.: IGBT1559
Unit Pack: 1
MOQ: 1
package: TO-247
Packaging: TUBE
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6.09 $
6.09 $

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1 6.09 $
60 5.72 $
90 5.62 $
120 5.53 $
210 5.20 $

IGBT 1200V 25A 1,85V TO-247 Description

Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.


Key Features

  • Maximum junction temperature: TJ = 175 °C
  • 10 μs of short-circuit withstand time
  • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
  • Tight parameter distribution
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft- and fast-recovery antiparallel diode


Parameter

V(CE)
1200 V
I(C)
25 A
V(CEsat)
1.85 V
Package
TO-247
Bodydiode
YES
P(tot)
375 W
Automotive
NO
t(r)
15 nS
td(off)
150 nS
td(on)
28 nS
Mounting
THT
Leadfree Defin.
10
Technology
TRENCH
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
ABC-Code
A
Supplier Lead time
34 weeks
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