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STGW25H120DF2

ST STGW25H120DF2

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ST

IGBT 1200V 50A 2,1V TO247-3
Supplier: STMicroelectronics
Matchcode: STGW25H120DF2
Rutronik No.: IGBT1460
Unit Pack: 30
MOQ: 600
package: TO247-3
Packaging: TUBE
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
5.30 $
3,180.00 $

IGBT 1200V 50A 2,1V TO247-3 Description

Trench gate field-stop IGBT, H series 1200 V, 25 A high Speed

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.


Key Features

  • Maximum junction temperature: TJ= 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat)= 2.1 V (typ.) @ IC= 25 A
  • 5 μs minimum short circuit withstand time at TJ=150 °C
  • Safe paralleling
  • Very fast recovery antiparallel diode
  • Low thermal resistance

Parameter

V(CE)
1200 V
I(C)
50 A
V(CEsat)
2.1 V
Package
TO247-3
Bodydiode
YES
P(tot)
375 W
Automotive
NO
t(r)
12 nS
td(off)
130 nS
td(on)
29 nS
Mounting
THT
Leadfree Defin.
10
Technology
H Series
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
Malaysia
Supplier Lead time
34 weeks
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