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STGW15H120DF2

ST STGW15H120DF2

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ST

IGBT 1200V 30A 2,1V TO247-3
Supplier: STMicroelectronics
Matchcode: STGW15H120DF2
Rutronik No.: IGBT1454
Unit Pack: 30
MOQ: 600
package: TO247-3
Packaging: TUBE
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
4.50 $
2,700.00 $

IGBT 1200V 30A 2,1V TO247-3 Description

Trench gate field-stop IGBT, H series 1200 V, 15 A high Speed

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.


Key Features

  • Maximum junction temperature: TJ= 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat)= 2.1 V (typ.) @ IC= 15 A
  • 5 μs minimum short circuit withstand time at TJ=150 °C
  • Safe paralleling
  • Very fast recovery antiparallel diode
  • Low thermal resistance


Parameter

V(CE)
1200 V
I(C)
30 A
V(CEsat)
2.1 V
Package
TO247-3
Bodydiode
YES
P(tot)
TBD W
Automotive
NO
t(r)
TBD nS
td(off)
TBD nS
td(on)
TBD nS
Mounting
THT
Leadfree Defin.
10
Technology
High Speed
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
Malaysia
ABC-Code
A
Supplier Lead time
40 weeks
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