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STGP10M65DF2

ST STGP10M65DF2

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ST

IGBT 650V 10A 1,55V TO220-3
Supplier: STMicroelectronics
Matchcode: STGP10M65DF2
Rutronik No.: IGBT1867
Unit Pack: 50
MOQ: 2000
package: TO220-3
Packaging: TUBE
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
0.7359 $
1,471.80 $

IGBT 650V 10A 1,55V TO220-3 Description

Trench gate field-stop IGBT M series, 650 V 10 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.


Key Features

  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 10 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
  • Maximum junction temperature: TJ = 175 °C


Parameter

V(CE)
650 V
I(C)
10 A
V(CEsat)
1.55 V
Package
TO220-3
Bodydiode
YES
P(tot)
115 W
Automotive
NO
t(r)
7.4 nS
td(off)
91 nS
td(on)
19 nS
Mounting
THT
Leadfree Defin.
10
Technology
Fast
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
ABC-Code
B
Supplier Lead time
34 weeks
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