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STGFW30H65FB

ST STGFW30H65FB

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ST

IGBT 650V 30A TO-3PF
Supplier: STMicroelectronics
Matchcode: STGFW30H65FB
Rutronik No.: IGBT1872
Unit Pack: 30
MOQ: 600
package: TO-3PF
Packaging: TUBE
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
1.94 $
1,164.00 $

IGBT 650V 30A TO-3PF Description

Trench gate field-stop IGBT, HB series 650 V, 30 A high Speed

These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.


Key Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance

Parameter

V(CE)
650 V
I(C)
60 A
V(CEsat)
1.65 V
Package
TO-3PF
Bodydiode
NO
P(tot)
58 W
Automotive
NO
t(r)
14.6 nS
td(off)
146 nS
td(on)
37 nS
Mounting
THT
Leadfree Defin.
10
Technology
highspeed
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
South Korea
Supplier Lead time
34 weeks
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