Cart

STGD6M65DF2

ST STGD6M65DF2

image shown is a representation only

ST

IGBT 650V 6A 1.9V DPAK
Supplier: STMicroelectronics
Matchcode: STGD6M65DF2
Rutronik No.: IGBT2169
Unit Pack: 2500
MOQ: 2500
package: DPAK
Packaging: REEL
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
0.6677 $
1,669.25 $

Prices

2,500 0.6677 $
5,000 0.6266 $
7,500 0.6061 $

IGBT 650V 6A 1.9V DPAK Description

Trench gate field-stop IGBT, M series 650 V, 6 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.


Key Features

  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 6 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode


Parameter

V(CE)
650 V
I(C)
6 A
V(CEsat)
1.9 V
Package
DPAK
Bodydiode
YES
P(tot)
88 W
Automotive
NO
t(r)
130 nS
td(off)
90 nS
td(on)
15 nS
Mounting
SMD
Leadfree Defin.
10
Technology
PowerMESH
Packaging
REEL
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
Supplier Lead time
99 weeks
With the articles in your cart you can send us an order, or - if you have further questions - a non-binding request.

Password forgotten?