Cart

STGD4M65DF2

ST STGD4M65DF2

image shown is a representation only

ST

IGBT 650V 4A 1,6V DPAK
Supplier: STMicroelectronics
Matchcode: STGD4M65DF2
Rutronik No.: IGBT2124
Unit Pack: 2500
MOQ: 2500
package: DPAK
Packaging: REEL
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
0.5702 $
1,425.50 $

Prices

2,500 0.5702 $
5,000 0.5351 $
7,500 0.5176 $
10,000 0.4781 $

IGBT 650V 4A 1,6V DPAK Description

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.


Key Features

  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.6 V (typ.) @ IC = 4 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode


Parameter

V(CE)
650 V
I(C)
4 A
V(CEsat)
1.6 V
Package
DPAK
Bodydiode
YES
P(tot)
68 W
Automotive
NO
t(r)
6.9 nS
td(off)
86 nS
td(on)
12 nS
Mounting
SMD
Leadfree Defin.
10
Technology
Fast
Packaging
REEL
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
ABC-Code
C
Supplier Lead time
99 weeks
With the articles in your cart you can send us an order, or - if you have further questions - a non-binding request.

Password forgotten?