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STGB30M65DF2

ST STGB30M65DF2

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ST

IGBT 650V 30A 1,55V D2PAK
Supplier: STMicroelectronics
Matchcode: STGB30M65DF2
Rutronik No.: IGBT1866
Unit Pack: 1000
MOQ: 1000
package: D2PAK
Packaging: REEL
On request Allocation
Article with this quantity is not orderable.. Please send us a request.
1.62 $
1,620.00 $

IGBT 650V 30A 1,55V D2PAK Description

Trench gate field-stop IGBT M series, 650 V 30 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode

Parameter

V(CE)
650 V
I(C)
30 A
V(CEsat)
1.55 V
Package
D2PAK
Bodydiode
YES
P(tot)
258 W
Automotive
NO
t(r)
13.4 nS
td(off)
115 nS
td(on)
31.6 nS
Mounting
SMD
Leadfree Defin.
10
Technology
Fast
Packaging
REEL
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
ABC-Code
B
Supplier Lead time
28 weeks
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