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STGB15M65DF2

ST STGB15M65DF2

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ST

IGBT M Series 650V 15A D2Pak
Supplier: STMicroelectronics
Matchcode: STGB15M65DF2
Rutronik No.: IGBT2105
Unit Pack: 1000
MOQ: 1000
package: D2PAK
Packaging: REEL
On request
1.34 $
1,340.00 $

IGBT M Series 650V 15A D2Pak Description

Trench gate field-stop IGBT M series, 650 V 15 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 15 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel Diode

Applications
- Motor control
- UPS
- PFC
- General purpose inverter


Parameter

V(CE)
650 V
I(C)
15 A
V(CEsat)
SMD V
Package
D2PAK
Bodydiode
M Series
P(tot)
175 W
Automotive
NO
t(r)
NO nS
td(off)
136 nS
td(on)
60 nS
Leadfree Defin.
10
Packaging
REEL
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
ABC-Code
B
Supplier Lead time
32 weeks
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