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PWD13F60

ST PWD13F60

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ST

Full Bridge Drv 600V 8A VFQFPN
Supplier: STMicroelectronics
Matchcode: PWD13F60
Rutronik No.: ICGDRV1228
Unit Pack: 136
MOQ: 136
package: VFQFPN
Packaging: TRAY
In Stock
On request
On request

Full Bridge Drv 600V 8A VFQFPN Description

High-density power driver - high voltage full bridge with integrated gate Driver


The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.


The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space.


The PWD13F60 device accepts a supply voltage (VCC) extending over a wide range and is protected by means of low-voltage UVLO detection on the supply voltage.


The input pins extended range allows an easy interfacing with microcontrollers, DSP units or Hall effect sensors.


The device is available in a compact VFQFPN package.


Key Features


  • Power system-in-package integrating gate drivers and high-voltage power MOSFETs
    • Low RDS(on) = 320 mΩ
    • BVDSS = 600 V
  • Suitable for operating as
    • Full bridge
    • Dual independent half bridges
  • Wide driver supply voltage down to 6.5 V
  • UVLO protection on supply voltage
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Interlocking function to prevent cross conduction
  • Internal bootstrap diode
  • Outputs in phase with inputs
  • Very compact and simplified layout
  • Flexible, easy and fast design

Parameter

Application
DRIVER
Automotive
NO
Package
VFQFPN
Leadfree Defin.
RoHS-conform
Packaging
TRAY
ECCN
EAR99
Customs Tariff No.
85423919000
Country
South Korea
Supplier Lead time
18 weeks
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